Variable clock divider

ABSTRACT

Disclosed herein is an apparatus that includes a first group including a plurality of first latch circuits coupled in series and a second group including a plurality of second latch circuits coupled in series. Each of the first latch circuits performs a latch operation in synchronization with a rise trigger signal. Each of the second latch circuits performs a latch operation in synchronization with a fall trigger signal. The rise and fall trigger signals are alternately activated every even clock cycles or every odd clock cycles. In response to a division ratio, first one or more of the first and second latch circuits are bypassed and second one or more of the first and second latch circuits are cyclically coupled.

CROSS REFERENCE TO RELAYED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.17/020,508 filed Sep. 14, 2020. The aforementioned application isincorporated herein by reference, in its entirety, for any purpose.

BACKGROUND

Some semiconductor devices include a clock divider circuit thatgenerates an output clock signal having a lower frequency than that ofan input clock signal by dividing the input clock signal. It issometimes desired that the clock divider circuit maintains the dutyratio of the output clock signal at 50% even when the division number isan odd number.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a semiconductor device according to oneembodiment of the present disclosure.

FIG. 2 is a block diagram of a test circuit according to one embodimentof the present disclosure.

FIG. 3A and FIG. 3B are circuit diagrams of a clock divider circuitaccording to one embodiment of the present disclosure.

FIGS. 4A to 4E are timing charts for explaining an operation of theclock divider circuit according to one embodiment of the presentdisclosure.

FIG. 5 is a circuit diagram of a clock divider circuit according to oneembodiment of the present disclosure.

DETAILED DESCRIPTION

Various embodiments of the present invention will be explained below indetail with reference to the accompanying drawings. The followingdetailed description refers to the accompanying drawings that show, byway of illustration, specific aspects and embodiments in which thepresent invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice thepresent invention. Other embodiments may be utilized, and structural,logical and electrical changes may be made without departing from thescope of the present invention. The various embodiments disclosed hereinare not necessary mutually exclusive, as some disclosed embodiments canbe combined with one or more other disclosed embodiments to form newembodiments.

FIG. 1 is a block diagram of a semiconductor device 10 according to oneembodiment of the present disclosure. The semiconductor device 10 canbe, for example, a DDR4 SDRAM (Double-Data-Rate 4 Synchronous DynamicRandom-Access Memory) incorporated into a single semiconductor chip. Thesemiconductor device 10 may be mounted on an external substrate such asa memory module substrate or a motherboard. As shown in FIG. 1 , thesemiconductor device 10 includes a memory cell array 11. The memory cellarray 11 includes a plurality of word lines WL, a plurality of bit linesBL, and a plurality of memory cells MC respectively provided atintersections between the word lines WL and the bit lines BL. Selectionof the word lines WL is performed by a row decoder 12 and selection ofthe bit lines BL is performed by a column decoder 13. A sense amplifier14 is coupled to a corresponding one of the bit lines BL and a local I/Oline pair LIOT/B. The local I/O line pair LIOT/B is coupled to a mainI/O line pair MIOT/B via a transfer gate 15 that functions as a switch.The memory cell array 11 is divided into m+1 memory banks includingmemory banks BANK0 to BANKm.

A plurality of external terminals included in the semiconductor device10 include a command address terminal 21, a clock terminal 22, a dataterminal 23, and power terminals 24 and 25. The data terminal 23 iscoupled to an I/O circuit 16.

A command address signal CA is supplied to the command address terminal21. A signal related to an address in the command address signal CAsupplied to the command address terminal 21 is transferred to an addressdecoder 32 via a command address input circuit 31, and a signal relatedto a command is transferred to a command decoder 33 via the commandaddress input circuit 31. The address decoder 32 decodes the addresssignal to generate a row address XADD and a column address YADD. The rowaddress XADD is supplied to the row decoder 12 and the column addressYADD is supplied to the column decoder 13. An access control circuit mayinclude circuits used to access the memory cell array 11, for example,the address decoder 32, command decoder 33, row decoder 12, and/orcolumn decoder 13, by using an internal address signal and internalcommands A clock enable signal CKE in the command address signal CA issupplied to an internal clock generator 35.

Complementary external clock signals CK and/CK are supplied to the clockterminal 22. The complementary external clock signals CK and/CK areinput to a clock input circuit 34. The clock input circuit 34 generatesan internal clock signal ICLK based on the complementary external clocksignals CK and/CK. The internal clock signal ICLK is supplied to atleast the command decoder 33, the internal clock generator 35, and atest circuit (mBist circuit) 40. The internal clock generator 35 isactivated, for example, by the clock enable signal CKE and generates aninternal clock signal LCLK based on the internal clock signal ICLK. Theinternal clock signal LCLK is supplied to the I/O circuit 16. Theinternal clock signal LCKL is used as a timing signal that defines atiming when read data DQ is to be output from the data terminal 23 in aread operation. In a write operation, write data is input from outsideto the data terminal 23. A data mask signal DM may be input from outsideto the data terminal 23 in the write operation.

Power potentials VDD and VSS are supplied to the power terminal 24.These power potentials VDD and VSS are supplied to a voltage generator36. The voltage generator 36 generates various internal potentials VPP,VOD, VARY, VPERI, and the like based on the power potential VDD and VSS.The internal potential VPP is mainly used in the row decoder 12, theinternal potentials VOD and VARY are mainly used in the sense amplifiers14 included in the memory cell array 11, and the internal potentialVPERI is used in other many circuit blocks.

Power potentials VDDQ and VSSQ are supplied from the power terminal 25to the I/O circuit 16. Although the power potentials VDDQ and VSSQ canbe same as the power potentials VDD and VSS supplied to the powerterminal 24, respectively, dedicated power potentials VDDQ and VSSQ areallocated to the I/O circuit 16 to prevent power-supply noise thatoccurs in the I/O circuit 16 from propagating to other circuit blocks.

The command decoder 33 activates an active signal ACT when an activecommand is issued. The active signal ACT is supplied to the row decoder12. When a read command or a write command is issued from outsidefollowing the active command, the command decoder 33 activates a columnselection signal CYE. The column selection signal CYE is supplied to thecolumn decoder 13 and a corresponding one of the sense amplifiers 14 isactivated in response thereto. Accordingly, read data is read from thememory cell array 11 in the read operation. The read data having beenread from the memory cell array 11 is transferred to the I/O circuit 16via a read/write amplifier 17 and a FIFO (First-In First-Out) circuit 18and is output from the data terminal 23 to outside. In the writeoperation, write data having been input from outside via the dataterminal 23 is written into the memory cell array 11 via the I/O circuit16, the FIFO circuit 18, and the read/write amplifier 17.

The command decoder 33 activates a mode register set signal MRS when amode register set command is issued. The mode register set signal MRS issupplied to a mode register 37. When the mode register set signal MRS isactivated, various control parameters stored in the mode register 37 areoverwritten. The control parameters stored in the mode register 37include a division signal DIV. When a test command is issued fromoutside, the mode register 37 outputs an enable signal mBistEN. Thedivision signal DIV and the enable signal mBistEN are supplied to thetest circuit 40.

FIG. 2 is a block diagram of a test circuit according to one embodimentof the present disclosure. As shown in FIG. 2 , the test circuit 40includes a clock divider circuit 41, an oscillator circuit 42, amultiplexer 43, and an mBist engine 44. The clock divider circuit 41 andthe oscillator circuit 42 are activated by the enable signal mBistEN.The enable signal mBistEN is activated when a test operation using thetest circuit 40 is to be performed. When the clock divider circuit 41 isactivated, a divided clock signal mBistEXCLK is generated. The dividedclock signal mBistEXCLK is a signal obtained by dividing the internalclock signal ICLK and the division ratio thereof is designated by thedivision signal DIV. The division signal DIV may be one of the controlparameters set in the mode register 37. When the oscillator circuit 42is activated, an oscillator signal mBistOSC having a predeterminedfrequency is generated. The divided clock signal mBistEXCLK and theoscillator signal mBistOSC are input to the multiplexer 43. Themultiplexer 43 supplies either the divided clock signal mBistEXCLK orthe oscillator signal mBistOSC to the mBist engine 44 on the basis of aclock selection signal CLKSEL. The mBist engine 44 automaticallygenerates a clock signal mBistCLK for a test, an internal commandmBistCMD for a test, and an internal address mBistADD for a test insynchronization with the divided clock signal mBistEXCLK or theoscillator signal mBistOSC. Accordingly, when the mBist engine 44 isactivated, an automatic operation test for the memory cell array 11 isperformed. During a period in which the operation test using the mBistengine 44 is performed, a state signal mBistIP is kept activated. Thestate signal mBistIP is supplied to the command address input circuit 31and the clock input circuit 34 shown in FIG. 1 . When the state signalmBistIP is activated, the command address input circuit 31 and the clockinput circuit 34 are inactivated, whereby current consumption due tooperations of the command address input circuit 31 and the clock inputcircuit 34 is reduced.

FIG. 3A and FIG. 3B are circuit diagrams of a clock divider circuitaccording to one embodiment of the present disclosure. As shown in FIG.3A, the clock divider circuit 41 includes inverter circuits 51 and 52through which the internal clock signal ICLK passes, wherebycomplementary latch clock signals LATCLK and LATCLKF are generated. Thelatch clock signal LATCLK is input to clock input nodes C of latchcircuits 53 to 56 and the latch clock signal LATCLKF is input toinverted clock input nodes CF of the latch circuits 53 to 56. Each ofthe latch circuits 53 to 56 latches a signal supplied to a data inputnode D in synchronization with a rise edge of a signal input to theclock input node C and a fall edge of a signal input to the invertedclock input node CE The latched signal is output from each data outputnode Q. This operation is performed similarly in latch circuits 61 to 68shown in FIG. 3B.

The enable signal mBistEN is supplied to the data input node D of thelatch circuit 53. An output signal of the latch circuit 53 is suppliedto the latch circuit 54 and accordingly an enable signal mBistENSyncoutput from the latch circuit 54 is synchronized with the latch clocksignals LATCLK and LATCLKF. The enable signal mBistENSync is supplied tothe data input node D of the latch circuit 55 and an output signal ofthe latch circuit 55 is supplied to the latch circuit 56. A signalobtained by inverting the output of the latch circuit 55 using aninverter circuit 57 and an output signal of the latch circuit 56 aresupplied to a NOR gate circuit 58. Accordingly, when the enable signalmBistEN is activated to a high level, one shot of an enable signal CLKENsynchronized with the internal clock signal ICLK is generated.

As shown in FIG. 3B, the clock divider circuit 41 includes eight latchcircuits 61 to 68 coupled cyclically. Among these latch circuits, thelatch circuits 68 and 61 to 63 form a first group, and the latchcircuits 64 to 67 form a second group. An output signal of the latchcircuit 64 is used as a fall trigger signal FT, and an output signal ofthe latch circuit 68 is used as a rise trigger signal RT. The risetrigger signal RT and the enable signal CLKEN are supplied to an OR gatecircuit 60. An output signal of the OR gate circuit 60 is supplied incommon to one input nodes of AND gate circuits 71 to 74. Divisionsignals DIV78, DIV56, and DIV4 are supplied to the other input nodes ofthe AND gate circuits 71 to 73, respectively. The division signalsDIV78, DIV56, and DIV4 are control signals generated based on thedivision signal DIV. The division signal DIV78 is activated to a highlevel in a case in which the division ratio designated by the divisionsignal DIV indicates division by seven or eight, the division signalDIV56 is activated to a high level in a case in which the division ratiodesignated by the division signal DIV indicates division by five or six,and the division signal DIV4 is activated to a high level in a case inwhich the division ratio designated by the division signal DIV indicatesdivision by four. The other input node of the AND gate circuit 74 isfixed to a high level.

Output signals of the AND gate circuits 71 to 74 are supplied to oneinput nodes of OR gate circuits 81 to 84, respectively. The other inputnodes of the OR gate circuits 82 to 84 are respectively coupled to dataoutput nodes Q of the latch circuits 61 to 63 at the preceding stages.The other input node of the OR gate circuit 81 is fixed to a low level.Output signals of the OR gate circuits 81 to 84 are respectivelysupplied to data input nodes D of the latch circuits 61 to 64. With thisconfiguration, when the enable signal CLKEN or the rise trigger signalRT is activated, the fall trigger signal FT is generated by passage of aone-shot pulse through four latch circuits 61 to 64 in a case in whichthe division ratio indicates division by seven or eight, the falltrigger signal FT is generated by passage of a one-shot pulse throughthree latch circuits 62 to 64 in a case in which the division ratioindicates division by five or six, and the fall trigger signal FT isgenerated by passage of a one-shot pulse through two latch circuits 63and 64 in a case in which the division ratio indicates division by four.

The fall trigger signal FT being the output signal of the latch circuit64 is supplied in common to one input nodes of AND gate circuits 75 to78. The division signals DIV78, DIV56, and DIV4 are supplied to theother input nodes of the AND gate circuits 75 to 77, respectively. Theother input node of the AND gate circuit 78 is fixed to a high level.Output signals of the AND gate circuits 75 to 78 are supplied to oneinput nodes of OR gate circuits 85 to 88, respectively. The other inputnodes of the OR gate circuits 86 to 88 are respectively coupled to dataoutput nodes Q of the latch circuits 65 to 67 at the preceding stages.The other input node of the OR gate circuit 85 is fixed to a low level.Output signals of the OR gate circuits 85 to 88 are respectivelysupplied to data input nodes D of the latch circuits 65 to 68. With thisconfiguration, when the fall trigger signal FT is activated, the risetrigger signal RT is generated by passage of a one-shot pulse throughfour latch circuits 65 to 68 in a case in which the division ratioindicates division by seven or eight, the rise trigger signal RT isgenerated by passage of a one-shot pulse through three latch circuits 66to 68 in a case in which the division ratio indicates division by fiveor six, and the rise trigger signal RT is generated by passage of aone-shot pulse through two latch circuits 67 and 68 in a case in whichthe division ratio indicates division by four.

In this way, in a case in which the division ratio indicates division byseven or eight, the eight latch circuits 61 to 68 are cyclicallycoupled. In a case in which the division ratio indicates division byfive or six, the latch circuits 61 and 65 are bypassed and the remainingsix latch circuits 62 to 64 and 66 to 68 are cyclically coupled. In acase in which the division ratio indicates division by four, the latchcircuits 61, 62, 65, and 66 are bypassed and the remaining four latchcircuits 63, 64, 67, and 68 are cyclically coupled.

In the latch circuits 68 and 61 to 63 forming the first group, the latchclock signal LATCLK is supplied to the clock input nodes C and the latchclock signal LATCLKF is supplied to the inverted clock input nodes CEMeanwhile, clock switch circuits 94 to 97 are respectively allocated tothe latch circuits 64 to 67 forming the second group. The clock switchcircuits 94 to 97 interchange the latch clock signals LATCLK and LATCLKFto be input to the latch circuits 64 to 67 on the basis of a divisionsignal DIV57. The division signal DIV57 is a control signal generatedbased on the division signal DIV and is activated in a case in which thedivision ratio designated by the division signal DIV indicates divisionby five or seven, that is, a case in which the division number is an oddnumber. The clock switch circuits 94 to 97 supply the latch clock signalLATCLK to the clock input nodes C and supply the latch clock signalLATCLKF to the inverted clock input nodes CF, respectively, similarly tothe first group in a case in which the division signal DIV57 is in aninactive state, that is, a case in which the division number is an evennumber. In contrast, in a case in which the division signal DIV57 is inan active state, that is, a case in which the division number is an oddnumber, the clock switch circuits 94 to 97 supply the latch clock signalLATCLKF to the clock input nodes C and supply the latch clock signalLATCLK to the inverted clock input nodes CF, respectively, contrary tothe first group.

The fall trigger signal FT and the rise trigger signal RT are suppliedto a SR latch circuit 90. The SR latch circuit 90 is set in response toan inverted signal of the rise trigger signal RT and accordingly causesthe divided clock signal mBistEXCLK to rise from a low level to a highlevel. The SR latch circuit 90 is reset in response to an invertedsignal of the fall trigger signal FT and accordingly causes the dividedclock signal mBistEXCLK to fall from the high level to the low level.The divided clock signal mBistEXCLK is supplied to the mBist engine 44via the multiplexer 43 shown in FIG. 2 .

An operation of the clock divider circuit 41 is explained next withreference to FIGS. 4A to 4E being timing charts. FIGS. 4A to 4E aretiming charts for explaining an operation of the clock divider circuitaccording to one embodiment of the present disclosure.

In a case in which the division ratio designated by the division signalDIV indicates division by four, the division signal DIV4 is activatedand the other division signals DIV56, DIV78, and DIV57 are inactivated.In this case, four latch circuits including the latch circuits 63, 64,67, and 68 are cyclically coupled, so that each of the rise triggersignal RT and the fall trigger signal FT is activated every four clockcycles. For example, as shown in FIG. 4A, the rise trigger signal RT isactivated in synchronization with rise edges 0, 4, 8, and 12 of theinternal clock signal ICLK, and the fall trigger signal FT is activatedin synchronization with rise edges 2, 6, and 10 of the internal clocksignal ICLK. That is, the rise trigger signal RT and the fall triggersignal FT are alternately activated every two clock cycles. Accordingly,the divided clock signal mBistEXCLK becomes a signal obtained bydividing the internal clock signal ICLK by four and the duty ratiothereof becomes 50%.

In a case in which the division ratio designated by the division signalDIV indicates division by five, the division signals DIV56 and DIV57 areactivated and the other division signals DIV4 and DIV78 are inactivated.In this case, six latch circuits including the latch circuits 62 to 64and 66 to 68 are cyclically coupled. Further, in this case, the latchclock signals LATCLK and LATCLKF input to the latch circuits 64, 66, and67 are interchanged. Therefore, the period in which a one-shot pulse istransferred from the latch circuit 63 to the latch circuit 64 becomes ahalf clock cycle and the period in which a one-shot pulse is transferredfrom the latch circuit 67 to the latch circuit 68 also becomes a halfclock cycle. Accordingly, each of the rise trigger signal RT and thefall trigger signal RT is activated every five clock cycles. Forexample, as shown in FIG. 4B, the rise trigger signal RT is activated insynchronization with rise edges 0, 5, and 10 of the internal clocksignal ICLK and the fall trigger signal FT is activated insynchronization with fall edges 2, 7, and 12 of the internal clocksignal ICLK. That is, the rise trigger signal RT and the fall triggersignal FT are alternately activated every 2.5 clock cycles. Therefore,the divided clock signal mBistEXCLK becomes a signal obtained bydividing the internal clock signal ICLK by five and the duty ratiothereof becomes 50%.

In a case in which the division ratio designated by the division signalDIV indicates division by six, the division signal DIV56 is activatedand the other division signals DIV4, DIV78, and DIV57 are inactivated.In this case, six latch circuits including the latch circuits 62 to 64and 66 to 68 are cyclically coupled, so that each of the rise triggersignal RT and the fall trigger signal FT is activated every six clockcycles. For example, as shown in FIG. 4C, the rise trigger signal RT isactivated in synchronization with rise edges 0, 6, and 12 of theinternal clock signal ICLK and the fall trigger signal FT is activatedin synchronization with rise edges 3 and 9 of the internal clock signalICLK. That is, the rise trigger signal RT and the fall trigger signal FTare alternately activated every three clock cycles. Accordingly, thedivided clock signal mBistEXCLK becomes a signal obtained by dividingthe internal clock signal ICLK by six and the duty ratio thereof becomes50%.

In a case in which the division ratio designated by the division signalDIV indicates division by seven, the division signals DIV78 and DIV57are activated and the other division signals DIV4 and DIV56 areinactivated. In this case, eight latch circuits including the latchcircuits 61 to 68 are cyclically coupled. Further, in this case, thelatch clock signals LATCLK and LATCLKF to be input to the latch circuits64 to 67 are interchanged. Accordingly, the period in which a one-shotpulse is transferred from the latch circuit 63 to the latch circuit 64becomes a half clock cycle and the period in which a one-shot pulse istransferred from the latch circuit 67 to the latch circuit 68 alsobecomes a half clock cycle. Therefore, each of the rise trigger signalRT and the fall trigger signal FT is activated every seven cycles. Forexample, as shown in FIG. 4D, the rise trigger signal RT is activated insynchronization with rise edges 0 and 7 of the internal clock signalICLK and the fall trigger signal FT is activated in synchronization withfall edges 3 and 10 of the internal clock signal ICLK. That is, the risetrigger signal RT and the fall trigger signal FT are alternatelyactivated every 3.5 clock cycles. Accordingly, the divided clock signalmBistEXCLK becomes a signal obtained by dividing the internal clocksignal ICLK by seven and the duty ratio thereof becomes 50%.

In a case in which the division ratio designated by the division signalDIV indicates division by eight, the division signal DIV78 is activatedand the other division signals DIV4, DIV56, and DIV57 are inactivated.In this case, eight latch circuits including the latch circuits 61 to 68are cyclically coupled, so that each of the rise trigger signal RT andthe fall trigger signal FT is activated every eight clock cycles. Forexample, as shown in FIG. 4E, the rise trigger signal RT is activated insynchronization with rise edges 0 and 8 of the internal clock signalICLK and the fall trigger signal FT is activated in synchronization withrise edges 4 and 12 of the internal clock signal ICLK. That is, the risetrigger signal RT and the fall trigger signal FT are alternatelyactivated every four clock cycles. Accordingly, the divided clock signalmBistEXCLK becomes a signal obtained by dividing the internal clocksignal ICLK by eight and the duty ratio thereof becomes 50%.

In this way, the clock divider circuit 41 according to the presentembodiment includes the latch circuits 61 to 68 coupled cyclically andthe latch clock signals LATCLK and LATCLKF to the latch circuits 64 to67 forming the second group are interchanged in a case in which thedivision number is an odd number. Therefore, even when the divisionnumber is an odd number, the duty ratio can be kept at 50%.

FIG. 5 is a circuit diagram of a clock divider circuit according to oneembodiment of the present disclosure. While the frequencies of theinternal clock signal ICLK and the latch clock signals LATCLK andLATCLKF are same in the embodiment described above, this point is notessential in the present invention. For example, the frequency of thelatch clock signals LATCLK and LATCLKF may be lowered relative to thatof the internal clock signal ICLK with provision of a divider circuit100 that divides the internal clock signal ICLK as shown in FIG. 5 .This can reduce the number of latch circuits coupled cyclically when thefrequency of the internal clock signal ICLK is high.

Although this invention has been disclosed in the context of certainpreferred embodiments and examples, it will be understood by thoseskilled in the art that the inventions extend beyond the specificallydisclosed embodiments to other alternative embodiments and/or uses ofthe inventions and obvious modifications and equivalents thereof. Inaddition, other modifications which are within the scope of thisinvention will be readily apparent to those of skill in the art based onthis disclosure. It is also contemplated that various combination orsub-combination of the specific features and aspects of the embodimentsmay be made and still fall within the scope of the inventions. It shouldbe understood that various features and aspects of the disclosedembodiments can be combined with or substituted for one another in orderto form varying mode of the disclosed invention. Thus, it is intendedthat the scope of at least some of the present invention hereindisclosed should not be limited by the particular disclosed embodimentsdescribed above.

The invention claimed is:
 1. An apparatus, comprising: a first groupincluding a plurality of first latch circuits coupled in series; and asecond group including a plurality of second latch circuits coupled inseries, wherein each of the first latch circuits is configured toperform a latch operation in synchronization with a rise trigger signal,each of the second latch circuits is configured to perform a latchoperation in synchronization with a fall trigger signal, the rise andfall trigger signals being alternately activated every even clock cyclesor every odd clock cycles, and in response to a division ratio, firstone or more of the first and second latch circuits are bypassed andsecond one or more of the first and second latch circuits are cyclicallycoupled.
 2. The apparatus of claim 1, wherein the rise trigger signaland the fall trigger signal are alternately activated in synchronizationwith rise edges of a clock signal for every even clock cycles.
 3. Theapparatus of claim 1, wherein the rise trigger signal and the falltrigger signal are alternately activated in synchronization with riseedges of a clock signal for every odd clock cycles.
 4. The apparatus ofclaim 1, wherein at least one of the first latch circuits in the firstgroup is configured to output the rise trigger signal.
 5. The apparatusof claim 4, wherein when the fall trigger signal is activated, the risetrigger signal is generated by passage of a one-shot pulse through theat least one of the first latch circuits in the first group and at leastone of the second latch circuits in the second group.
 6. The apparatusof claim 1, wherein at least one of the second latch circuits in thesecond group is configured to output the fall trigger signal.
 7. Theapparatus of claim 6, wherein when the rise trigger signal is activated,the fall trigger signal is generated by passage of a one-shot pulsethrough the at least one of the second latch circuits in the secondgroup and at least one of the first latch circuits in the first group.8. The apparatus of claim 1, wherein the division ratio indicates aneven number.
 9. The apparatus of claim 1, wherein the division ratioindicates an odd number.
 10. The apparatus of claim 1, wherein thedivision ratio is designated by a division signal, and the divisionsignal is a control parameter in a mode register circuit.
 11. Theapparatus of claim 1, wherein the first group comprises a first shiftregister circuit, and the second group comprises a second shift registercircuit.
 12. The apparatus of claim 1, further configured to output adivided clock signal for a test of a memory cell array in response tothe rise trigger signal or the fall trigger signal.
 13. An apparatus,comprising: a test circuit configured to generate signals for a test ofa memory cell array in synchronization with a divided clock signal; anda clock divider circuit configured to generate the divided clock signalin response to a division ratio, the clock divider circuit comprising: aplurality of first latch circuits coupled in series; and a plurality ofsecond latch circuits coupled in series, wherein each of the first latchcircuits is configured to perform a latch operation in synchronizationwith one of a rise trigger signal and a fall trigger signal, the riseand fall trigger signals being alternately activated every odd clockcycles or every even clock cycles, each of the second latch circuits isconfigured to perform a latch operation in synchronization with anotherof the rise trigger signal and the fall trigger signal, and in responseto the division ratio, one or more of the first latch circuits and oneor more of the second latch circuits are bypassed, and remaining of thefirst and second latch circuits are cyclically coupled.
 14. Theapparatus of claim 13, wherein the rise trigger signal and the falltrigger signal are alternately activated in synchronization with riseedges of a clock signal for every even clock cycles or every odd clockcycles.
 15. The apparatus of claim 13, further comprising a third latchcircuit configured to be set in response to one of the rise and falltrigger signals and cause the divided clock signal to change from afirst logic level to a second logic level.
 16. The apparatus of claim15, wherein the third latch circuit configured to be reset in responseto another of the rise and fall trigger signals and cause the dividedclock signal to change from the second logic level to the first logiclevel.
 17. The apparatus of claim 13, wherein the clock divider circuitis a part of the test circuit.
 18. A semiconductor device, comprising: amemory cell array; an access control circuit configured to access thememory cell array by using an internal address signal and an internalcommand signal; and a test circuit configured to supply the internaladdress signal and the internal command signal to the access controlcircuit in synchronization with a first clock signal, the test circuitcomprising: an oscillator circuit configured to generate an oscillatorsignal; a clock divider circuit configured to generate a divided clocksignal by using a plurality of latch circuits coupled cyclically; and amultiplexer configured to supply the first clock signal as one of theoscillator signal and the divided clock signal based on a clockselection signal, wherein the plurality of latch circuits include afirst group of latch circuits and a second group of latch circuits, anoutput signal of one latch circuit of the first group is a rise triggersignal and an output signal of one latch circuit of the second group isa fall trigger signal, when the fall trigger signal is activated, therise trigger signal is generated by passage of a one-shot pulse throughthe one latch circuit of the first group and at least one latch circuitof the second group and, and when the rise trigger signal is activated,the fall trigger signal is generated by passage of a one-shot pulsethrough the one latch circuit of the second group and at least one latchcircuit of the first group.
 19. The semiconductor device of claim 18,wherein the rise trigger signal and the fall trigger signal arealternately activated in synchronization with rise edges of a secondclock signal for every even clock cycles indicated by a division ratio.20. The semiconductor device of claim 18, wherein the rise triggersignal and the fall trigger signal are alternately activated insynchronization with rise edges of a second clock signal for every oddclock cycles indicated by a division ratio.